As a pivotal strategic advanced electronic material, the ultra-wide bandgap semiconductor gallium oxide (β-Ga2O3) is emerging as a game-changer in the power electronics domain during the post-Moore era. This is largely attributable to its distinctive benefits, such as an exceptionally high breakdown field strength of 8 MV/cm and the capacity for large-scale melt growth. Vertical structure power electronic devices, when designed with an optimized vertical voltage-withstanding layer, can attain remarkable ultra-high voltage resistance, reaching up to ten kilovolts, and an outstanding ultra-high current-carrying capacity of up to one kiloampere per unit chip area. This meets the pressing needs for ultra-high power density, high efficiency, and compactness in sectors including smart grids, new energy vehicles, industrial motor drives, data center power supplies, and converters for renewable energy sources (such as photovoltaic and wind power).