Beijing Jingfei Semiconductor Technology Co., Ltd. has recently made a major breakthrough by successfully employing its self-developed laser lifting equipment to achieve the separation (referred to as "lifting" in the original context, but "separation" might be a more universally understandable term in this technical scenario) of 12-inch silicon carbide wafers. This technological advancement has effectively tackled the technical hurdles inherent in processing large-sized silicon carbide wafers. It shatters the long-standing technological monopoly previously held by overseas manufacturers in this domain, representing a substantial leap forward for China in the realm of critical manufacturing equipment for third-generation semiconductors. Notably, this innovation has slashed the unit chip cost of 12-inch silicon carbide wafers by 30% to 40% when compared to their 6-inch counterparts. Furthermore, it has bolstered industrial supply capabilities, expedited the process of localization substitution, and fostered the broader adoption of silicon carbide devices across various sectors, including new energy vehicles and renewable energy.