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Wang Zhongrui's Research Team at the SUSTech-HKUST Joint Microelectronics School Achieves Breakthrough in In-Memory Computing for Accelerating Electron-Ion Interactions
2025-08-20 /
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Author：小编
The research group headed by Dr. Wang Zhongrui at the SUSTech-HKUST Joint Microelectronics School, in partnership with the Institute of Microelectronics at the Chinese Academy of Sciences, Huazhong University of Science and Technology, and the University of Hong Kong, has introduced and validated a Resistive Random-Access Memory (RRAM)-based Reservoir Graph Neural Network (RGNN). This innovative approach offers a novel way to simulate ion-electron interactions within material systems. The groundbreaking results have been featured in the prestigious journal Nature Computational Science, marking a significant reduction in computational costs and an enhancement in energy efficiency.
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