A team led by Professor Xu Huaping from the Department of Chemistry at Tsinghua University has recently achieved a significant breakthrough in the realm of extreme ultraviolet (EUV) lithographic materials. They have successfully developed a novel photoresist based on polytelluroxane (PTeO). This innovative photoresist embodies the ideal characteristics of high EUV absorption capacity, enhanced energy utilization efficiency, molecular uniformity, and compact building blocks. This accomplishment presents a fresh design paradigm for advanced semiconductor manufacturing, promising to propel the development of next-generation EUV lithographic materials and foster innovation in semiconductor process technology.