A research team led by Professor Song Li at the University of Science and Technology of China (USTC) has recently unveiled a groundbreaking technology for precise synthesis through in situ domain engineering. This novel approach surmounts the hurdles associated with regulating the intrinsic defect configuration and distribution in two-dimensional materials during conventional epitaxial growth. By employing chemical vapor deposition, the team has successfully demonstrated the controlled direct epitaxial growth of monolayer tungsten disulfide lateral homojunctions. On June 13, these remarkable findings were published in the prestigious academic journal Journal of the American Chemical Society, under the title "Growth of Monolayer WS₂ Lateral Homojunctions via In Situ Domain Engineering". This pioneering method is poised to pave the way for novel research avenues and applications in the realm of two-dimensional materials.