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A pioneering research team from the National Key Laboratory of Integrated Circuit Manufacturing Technology, housed within the Chinese Academy of Sciences, has unveiled a groundbreaking ultrafast electrical writing technique. This innovative method harnesses field-like spin torque, enabling data writing without relying on magnetic moment precession or external magnetic fields. This advancement is poised to transcend the current physical limitations of MRAM in terms of speed and high-density integration. Experimental results have demonstrated that this method can accomplish data writing in an astonishing 0.2 nanoseconds, surpassing SRAM in performance benchmarks. This monumental achievement holds promising applications in the domains of artificial intelligence and high-performance computing, where stringent demands on read-write speeds are paramount.
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