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Runxin Microelectronics Awarded Patent for 'Wafer Transition Structure, Preparation Method, Aging Test Device, and Method'
4 day ago /
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Author：小编
Runxin Microelectronics (Dalian) Co., Ltd. has recently been granted a patent titled 'Wafer Transition Structure, Preparation Method, Aging Test Device, and Method', under the authorization number CN118866878B. Officially announced on February 14, 2025, with an application date of September 24, 2024, this patent falls within the realm of semiconductor technology. It encompasses advancements in wafer transition structures, methods for preparing wafers, and devices and methods for aging tests. The patent is anticipated to bolster the efficiency and dependability of assessments conducted at the wafer level.
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