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Micron Delivers 12-Layer Stacked HBM4 Samples to Key Customers
2025-06-12 /
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Author：小编
On June 12, Micron Technology, Inc. announced that it has successfully sampled its cutting-edge 12-layer stacked HBM4 memory with a capacity of 36GB to several key customers. Leveraging a mature 1β (1-beta) DRAM process, this HBM4 memory integrates advanced 12-layer packaging technology along with memory built-in self-test (MBIST) functionality. This significant development reinforces Micron's pioneering position in delivering memory solutions that excel in both performance and energy efficiency, particularly tailored for AI applications.
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