Amidst the global shift towards sustainable energy, perovskite solar cells have emerged as a highly promising next-generation photovoltaic technology, boasting a certified efficiency of 26.7%. Despite this potential, the low efficiency and limited lifespan of modular devices pose significant challenges to their commercialization. Specifically, in n-i-p structured solar cells, the commonly employed electron transport layer material, SnO2, exhibits several detrimental defects, including oxygen vacancies, dangling hydroxyl groups, and uncoordinated Sn4+. These imperfections not only impede carrier transport but also introduce flaws into the perovskite film, adversely affecting its crystallization morphology and the device's resistance to aging. During large-scale production, the defect issues at the SnO2/perovskite interface become increasingly pronounced. Consequently, optimizing this crucial interface has become a pressing priority in recent years for the development of large-area modular devices.