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Gallium Oxynitride: A Versatile Component in "Gallium-Based" Material Devices
2025-05-22 /
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Author：小编
Gallium oxynitride (GaOxNy) is a unique compound that bridges the gap between crystalline and amorphous states. Its physical and chemical properties can be finely tuned between those of gallium nitride (GaN) and gallium oxide (Ga2O3) by adjusting the preparation conditions. This material leverages the advantages of wide bandgap semiconductors with the flexibility of functional design, making it an exceptional choice for various applications such as power electronics, ultraviolet optoelectronic devices, and photoelectrocatalysis.
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