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NEO Semiconductor Unveils 3D X-DRAM Structure for 512GB Memory, Mimicking Flash Memory Innovations
2025-05-22 /
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Author：小编
NEO Semiconductor, a leading semiconductor company, has announced a groundbreaking redesign of memory aimed at the era of AI and high-performance computing. Leveraging 3D X-DRAM technology, the company seeks to replicate the successes of 3D NAND flash memory by achieving substantial gains in both density and performance through vertical multi-layer stacking of chips. This innovative approach addresses the capacity constraints of traditional DRAM, offering a pivotal solution to meet the burgeoning demand for high-performance, high-capacity memory semiconductors in AI and high-performance computing applications.
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