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Utilizing a self-developed technology for electrically excited transient absorption spectroscopy, the research team comprising Yao Hongbin, Fan Fengjia, Lin Yue, and Hu Wei from the University of Science and Technology of China has unveiled the primary cause behind the performance bottleneck in pure red perovskite light-emitting diodes (LEDs)—the leakage of holes to the electron transport layer. To address this issue, the team introduced a three-dimensional perovskite heterojunction design, effectively mitigating hole leakage and subsequently achieving the successful fabrication of high-performance pure red perovskite LEDs. These LEDs exhibit an impressive peak external quantum efficiency of 24.2%, a maximum brightness of 24,600 cd/m², and a remarkably low efficiency roll-off. The groundbreaking research findings were published in the prestigious journal Nature on May 7.
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