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A team from Fudan University has triumphantly unveiled a groundbreaking sub-nanosecond picosecond flash memory device named "Dawn (PoX)" that boasts an erase and write speed of an astonishing 400 picoseconds. This represents a monumental leap, surpassing existing technologies by an incredible 10,000 times. The device operates with a modest 5V programming voltage, endures over 5.5 million cycles, and retains data reliably for more than a decade. Leveraging a two-dimensional material-enhanced hot carrier injection mechanism, the research team ingeniously employed graphene and tungsten diselenide to replace conventional silicon materials. This innovative approach drastically enhanced carrier injection efficiency, effectively shattering the speed limitations of flash memory. The remarkable findings of this research have been featured in the prestigious Nature journal.
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