Research News | Pioneering Advancement by National Engineering Research Center: Magnetron Sputtered AlN Cap Layer Elevates p-GaN HEMT Device Performance

2025-04-22 / Read about 0 minute

Author：小编

The team led by Academician Hao Yue and Professor Ma Xiaohua has achieved groundbreaking advancements in the realm of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs). Their latest innovation, a novel p-GaN HEMT device featuring a low-temperature magnetron sputtered aluminum nitride (AlN) cap layer, has been heralded in the prestigious international journal Applied Surface Science. The research, titled "Enhanced p-GaN/AlGaN/GaN HEMTs Utilizing Magnetron-Sputtered AlN Cap Layer," underscores the significance of their work, which has been recognized by a journal with an impressive impact factor of 6.3, ranking it as a TOP journal in the second zone of the Chinese Academy of Sciences.

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