Search
Zhongxin Wafer Receives Patent for 'Innovative Surface Scratch Reduction Technique on Heavily Doped B Silicon Wafers'
2025-04-22 /
Read about 0 minute
Author：小编
On March 7, 2025, Hangzhou Zhongxin Wafer Semiconductor Co., Ltd. officially published its patent titled 'Innovative Surface Scratch Reduction Technique on Heavily Doped B Silicon Wafers', bearing the application publication number CN119581322A. This patent is designed to enhance the surface treatment technology of silicon wafers, minimizing scratches and significantly improving the overall quality of the wafers.
-
C114 Communication Network -
Communication Home
7 X 24 Track global technological trends
