Power devices serve as the linchpin of power electronic systems, finding ubiquitous application in a myriad of electronic gadgets. As silicon-based power devices inch closer to their performance thresholds, silicon carbide (SiC), a pioneering third-generation semiconductor material, has emerged as a formidable contender. SiC power devices excel in catering to the stringent requirements of space power systems, offering heightened energy efficiency, miniaturization, and lightweight construction.
