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On January 21, power devices, the linchpin of power electronic systems essential for power conversion and control, find extensive applications across various domains crucial to national economy and people's livelihood. The Institute of Microelectronics at the Chinese Academy of Sciences proudly announced that the collaborative team of Liu Xinyu, Tang Yidan, and Liu Yanmin has triumphantly developed China's first domestically produced high-voltage radiation-resistant silicon carbide (SiC) power device along with its accompanying power supply system. This pioneering system has successfully completed the initial phase of space verification and achieved in-orbit application, marking a significant leap forward in China's advancements in the realm of high-voltage radiation-resistant silicon carbide power devices.
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