Samsung Electronics' efforts to develop its pioneering sixth-generation 10nm-class 1c DRAM process in South Korea have encountered significant hurdles, pushing back the anticipated completion date from late 2024 to June 2025. This delay introduces uncertainty into the mass production schedule of High Bandwidth Memory 4 (HBM4), which was originally targeted for the second half of 2025. Samsung aims to achieve a yield rate of 70% within the next six months, yet the progress of the 1c DRAM remains uncertain. This setback not only jeopardizes the timely mass production of DDR5 memory but also impedes the development trajectory of HBM. Should the mass production of 1c DRAM be further delayed until the end of 2025, it could potentially push back the mass production of HBM beyond 2025, undermining Samsung's competitive edge in the HBM market. In an attempt to expedite mass production, Samsung is making adjustments to the design of its 1c DRAM process technology, although there is still doubt as to whether it can meet the original timeline for mass production.