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Shanghai New Micro Semiconductor Publishes Patent for Advanced Semiconductor Device and Manufacturing Method
2025-01-20 /
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Author：小编
On December 13, 2024, Shanghai New Micro Semiconductor Co., Ltd. successfully published its patent for 'A Semiconductor Device and Its Manufacturing Method,' bearing the publication number CN119132952A. This innovative patent leverages a stacked field plate structure to achieve remarkable electric field modulation capability while maintaining a robust dielectric breakdown voltage. This groundbreaking approach significantly enhances the performance and reliability of semiconductor devices, marking a significant advancement in the field.
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