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HHGrace Semiconductor Unveils Patent for 'Method to Reduce Gate-Source Capacitance'
2025-01-17 /
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Author：小编
Shanghai HHGrace Semiconductor Manufacturing Co., Ltd. has recently announced the granting of a patent titled 'Method to Reduce Gate-Source Capacitance,' bearing the application publication number CN119108271A. The patent was published in December 2024, following an application filed in August 2024 (Note: Publication dates are typically subsequent to application dates, as indicated by reference articles). This innovative patent aims to minimize gate-source capacitance through groundbreaking processes, with wafer-level testing demonstrating a reduction of approximately 10% in input capacitance compared to conventional technological methods.
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