Samsung Electronics is encountering substantial obstacles in boosting the yield rate of its pioneering 3-nanometer GAA process. Initially aiming for a 70% yield rate across both the first and second generations of this technology, current data reveals that the refined second-generation process has only managed to reach a 20% yield rate, markedly lower than anticipated. In stark contrast, TSMC has demonstrated a remarkable 60% yield rate in its 2-nanometer trial production. In an effort to elevate its own yield rate, Samsung Electronics has sought external manufacturing assistance, but it still faces significant technical barriers to overcome.
