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HHGrace's Patent on 'Integrated Semiconductor Devices and Fabrication Methods' Officially Published
2025-01-15
Shanghai HHGrace Semiconductor Manufacturing Co., Ltd. has announced the publication of a patent titled 'Topological Protected Photonic Circuit Design Method and Related Devices,' bearing the application publication number CN119133083A and released on August 21, 2024. This groundbreaking patent leverages a unique fusion of Dual-Trench Isolation (DTI) and Silicon-On-Insulator (SOI) technologies to attain complete dielectric isolation. This innovation not only bolsters the chip's resistance to Electromagnetic Interference (EMI) but also effectively mitigates parasitic bipolar effects and the risk of latch-up, setting a new standard in semiconductor device design.
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