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Significant Advancement in Low-Cost MOSFET Utilizing Novel SiC Composite Substrate
2025-01-09
In a collaborative effort, Liu Xinyu's team from the Institute of Microelectronics at the Chinese Academy of Sciences, along with Qinghe Jingyuan Company and Nanjing Electronic Devices Institute, has achieved a remarkable milestone. They have successfully developed a high-performance, cost-effective 1200V SiC MOSFET, leveraging a new 6-inch SiC composite substrate. This groundbreaking innovation promises a 40% cost reduction by efficiently utilizing lower-grade SiC substrates, all while preserving exceptional performance and reliability.
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