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Infineon has announced that its Villach fab in Austria, utilizing existing silicon semiconductor manufacturing equipment, has become the first to process 300mm silicon carbide wafers into power semiconductor devices in a full-scale semiconductor fab environment, demonstrating the commercial viability of large-format silicon carbide wafers. The company will collaborate with customers and partners to plan the timing for 12-inch silicon carbide technology and mass production, while advancing its 200mm silicon carbide manufacturing roadmap. Additionally, Infineon has validated the feasibility of cold split technology on 12-inch silicon carbide at its Dresden fab in Germany; this process can enhance processing efficiency from ingot to wafer and reduce losses.
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