On October 8, 2026, the team of Di Zengfeng and Tian Ziao from the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, in collaboration with the team of Kou Xufeng from ShanghaiTech University and the team of Lu Haizhou from the Southern University of Science and Technology, achieved a breakthrough in the field of wafer-scale low-symmetry quantum material preparation and quantum rectification research. The relevant results were published in the international academic journal Science. The research team used a surface pre-melting engineering technique to heat a germanium (110) substrate to near its melting point, causing its surface atomic layer to form a quasi-liquid disordered state while maintaining its internal single-crystal structure. By precisely controlling the cooling rate, a one-dimensional stripe structure with a period of approximately 0.56 nanometers was reconstructed and used as a template to regulate the crystal symmetry of the upper graphene layer. This reduced the graphene symmetry from the highly symmetric D6h to C1v, which retains only a single mirror plane, forming a low-symmetry graphene/germanium (110) moiré superlattice C1v-graphene. This material exhibits a significant nonlinear Hall effect under room temperature and zero magnetic field conditions, with a nonlinear Hall conductivity three orders of magnitude higher than that of existing material systems. The research team employed a process compatible with complementary metal-oxide-semiconductor (CMOS) backend integration to fabricate a rectifier and antenna-integrated nonlinear Hall rectifier array on a 4-inch C1v-graphene wafer. This device can achieve effective direct current output under low radio frequency (RF) input power and has successfully demonstrated light activation. It significantly outperforms traditional semiconductor junction and diode rectification schemes in terms of space-based weak wireless energy harvesting and rectification capabilities. This study has established a complete chain from wafer preparation of low-symmetry materials, analysis of quantum transport mechanisms, to integrated device verification, providing a new material platform and technological pathway for the large-scale manufacturing of nonlinear quantum devices. In the future, by further optimizing RF coupling, impedance matching, and energy conversion efficiency, this technology is expected to be applied in self-powered microelectronic devices, wireless sensing, and novel nonlinear electronic and optoelectronic devices.