Search
According to a report from South Korea’s Maeil Business News, Samsung Electronics’ latest-generation 12-layer HBM4E high-bandwidth memory successfully completed quality verification with Nvidia and several major cloud service providers by the end of September. However, passing this verification does not automatically translate into a signed supply contract. Details such as customer order volumes, contract values, and the timeline for mass production supply remain unconfirmed. Samsung has also clarified that it cannot verify the news of successful verification.
This memory solution leverages a 1c nm DRAM die paired with a 4nm logic die, delivering a substantial single-stack capacity of 48GB. It achieves a pin speed ranging from 14 to 16Gbps, along with a 16% improvement in energy efficiency and a 14% enhancement in thermal resistance.
-
C114 Communication Network -
Communication Home
