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On October 7, Korea Economic Daily reported that Samsung Electronics’ next-generation high-bandwidth memory, the 12-layer HBM4E, has successfully completed quality verification with Nvidia and other major hyperscale data center operators. This verification process adheres strictly to the standards set by customers. While the product’s successful verification has been confirmed, details regarding supply volume, contract scale, and the timeline for mass production are still pending finalization. Industry experts suggest that as the market shifts toward next-generation products, Samsung is well-positioned to secure an early advantage in expanding its footprint within the high-performance AI memory sector, particularly as it competes with rivals SK Hynix and Micron.
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