Recently, an event dedicated to sharing cutting-edge Silicon Carbide technology and showcasing its achievements was held in Shanghai. During this event, Yaoxin Microelectronics proudly presented the world's inaugural Silicon Carbide Superjunction MOSFET product. This innovative product was the result of a collaborative effort between Yaoxin Microelectronics and a team led by Professor Hao Yue, a distinguished academician of the Chinese Academy of Sciences and a professor at Xi'an Electronic and Science University. They worked hand-in-hand with the wafer foundry NLAC to develop the process platform. Following five years of relentless technological advancements, the product has successfully undergone validation. The device boasts an ultra-high voltage tolerance of 1635V, exhibits significantly improved performance at elevated temperatures, and achieves an 81% surge in power density. Its overall performance stands at an internationally leading level, signifying China's Silicon Carbide industry's evolution from adhering to international norms to achieving groundbreaking, original innovations.