On August 21, 2026, Qianhe Yibang, a company specializing in 3D in-memory computing chips, proudly announced the successful tap-out and power-on of its self-developed, groundbreaking 4-layer 3D DRAM stacked in-memory computing chip. This achievement signifies a pivotal shift, transitioning the chip from the realm of technical validation to the practical stage of engineering implementation. Leveraging its proprietary three-dimensional integrated native computing architecture and advanced 3D DRAM stacking technology, the company has, for the first time, accomplished high-density vertical integration across four layers of chips. This breakthrough effectively dismantles the 'memory wall' bottleneck that has long plagued traditional planar architectures, opening up new horizons in computing performance and efficiency.