On August 20, Shenzhen Pinghu Laboratory unveiled a significant advancement in the realm of gallium nitride (GaN) technology, successfully introducing the world's inaugural 8-inch silicon carbide-based gallium nitride (GaN-on-SiC) enhanced High Electron Mobility Transistor (HEMT) process platform. By capitalizing on the laboratory's integrated strengths in scientific research and pilot-scale production capabilities, this platform has surmounted several critical technical hurdles. It has thoroughly validated the industrial viability of 8-inch GaN-on-SiC technology, thereby establishing a robust foundation for the integrated progression of third-generation semiconductors, GaN and SiC.