Recently, Ferrotec (Zhejiang) has made a significant technological leap by successfully cultivating its inaugural batch of 12-inch silicon ingots, heavily doped with both arsenic and boron. The ingots produced in this breakthrough encompass two distinct types: N-type, heavily doped with arsenic, and P-type, heavily doped with boron. These ingots have achieved a target resistivity within the low-resistance range, specifically at the mΩ・cm level. This achievement aligns perfectly with the stringent demands for low resistance and high uniformity in epitaxial substrates, which are crucial for high-end power devices. Consequently, this advancement further fortifies the domestic supply of 12-inch, high-end, heavily doped silicon wafers, marking a notable enhancement in the product system.