On August 4, 2026, Kioxia and SanDisk made a joint announcement regarding their 10th-generation Quadruple-Level Cell (QLC) 3D NAND flash memory technology. This cutting-edge technology employs a 332-layer stacking approach, resulting in a remarkable bit density of 37Gb/mm²—a significant 60% boost compared to the 8th generation. Moreover, it achieves an impressive interface speed of up to 4.8Gb/s, marking a milestone as the industry's inaugural QLC flash memory to attain such velocities. The innovative technology is compatible with Toggle DDR6.0 and the Standalone Command Address (SCA) protocol, with the goal of elevating both performance and energy efficiency for high-capacity storage solutions, specifically tailored for data center and premium consumer SSD applications.