Recently, Suzhou Extreme Ultraviolet Semiconductor has made public its independently engineered prototype of a triple-plasma-coupled DPP extreme ultraviolet (13.5nm EUV) light source. By integrating innovative designs, such as electrodes configured with a gradient structure, the company has significantly boosted both the power output and stability of the light source. This breakthrough presents a promising avenue for the industrial utilization of EUV lithography.
