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Recently, the Nano-fabrication Platform at the Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, working in concert with the University of Science and Technology of China, Nanjing University, Henan Normal University, and the University of Electronic Science and Technology of China, has achieved notable advancements in the realm of gallium oxide vertical power devices. The research centers on vertical fin-type field-effect transistors, current aperture vertical electron transistors, trench-gate metal-oxide-semiconductor field-effect transistors, and Schottky barrier diodes. It has led to the development of crucial technologies, including local bottom dielectric field modulation, a full ion implantation planar process, MOCVD sidewall re-epitaxy, HF sidewall wet processing, buried field shielding, and composite edge termination.
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