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Samsung Electronics is ramping up efforts alongside its partners to develop manufacturing equipment for the mass production of seventh-generation, 10-nanometer-class (1d) DRAM. The company plans to deploy mass production equipment in either the second or third quarter of next year, with preliminary mass production anticipated as early as the year’s end. The 1d DRAM features a circuit line width of 10 to 11 nanometers, which is narrower than the sixth-generation 1c DRAM (ranging from 11 to 12 nanometers) currently available on the market. This reduction in line width translates to enhanced performance and improved energy efficiency. The 1d DRAM is slated to serve as the core chip for the ninth-generation high-bandwidth memory (HBM5E), which is expected to be commercialized in 2029.
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