Samsung Electronics Reveals the Tiniest 3D Stacked Transistor in the Industry
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Author:小编   

On June 17th, Samsung Electronics presented its most recent breakthrough at VLSI 2026: the development of the industry's most compact 3D stacked transistor. Boasting a remarkably small gate pitch of just 42nm and incorporating a vertical stacking architecture, this innovation transcends the constraints of conventional planar designs. It holds significant promise for application within the realm of system semiconductors.