Search
On June 11, South Korean tech news outlet THEELEC reported that SK Hynix has successfully wrapped up production verification for its next-generation V10 series 375-layer 3D NAND flash memory and is now moving forward with the conversion of its production lines. The company has outlined plans to achieve large-scale mass production by 2026, through upgrades to its existing factories, in a bid to challenge Samsung Electronics' dominant position in ultra-high stacking technology. The standout feature of this technological advancement is the innovation in the materials used for the metal wiring layers, with some word lines transitioning from the traditional tungsten to molybdenum. As 3D NAND technology progresses towards 600+ layers, molybdenum materials are poised to play a pivotal role in the era of ultra-high stacking.
-
C114 Communication Network -
Communication Home
