At Computex 2026, Samsung Electronics made a splash by unveiling the prototype of its eighth-generation high-bandwidth memory, HBM5. The centerpiece of this technological marvel is its groundbreaking thermal management solution, dubbed Heat Path Block (HPB). This innovation has already proven its mettle on the HBM4E platform and is slated for formal rollout alongside HBM5. Moreover, HBM5 will leverage the cutting-edge sixth-generation 10-nanometer-class DRAM process, coupled with a 2-nanometer logic process node, marking a significant leap in memory technology.

In a strategic move, Samsung commenced shipping samples of its 12-layer HBM4E to key global customers in late May. These samples boast a robust pin transfer speed of 14Gbps, with the potential to scale up to 16Gbps. Each stack delivers an impressive bandwidth of 3.6TB/s and packs a hefty 48GB capacity. Looking ahead, Samsung also plans to introduce subsequent versions with 32GB and 64GB capacities, catering to a diverse range of memory needs.

Against the backdrop of a general uptick in memory prices, the notable surge in general-purpose DRAM prices has further solidified Samsung and SK Hynix's stronghold in HBM pricing. This trend has prompted significant upward revisions in profit forecasts for both industry giants. According to Morgan Stanley, Samsung's full-year operating profit is projected to skyrocket by 464% year-on-year this year, while SK Hynix is anticipated to witness growth of around 280%, underscoring the immense potential and profitability of the AI memory market.