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On June 2, San'an Optoelectronics announced via its official WeChat account that it has, in partnership with the National Engineering Research Center for Wide Bandgap Semiconductors at Xidian University and Hangzhou Garen Semiconductor Co., Ltd., made a significant breakthrough in the homogeneous epitaxy technology of gallium oxide—a fourth-generation semiconductor material. Leveraging metal-organic chemical vapor deposition (MOCVD), this achievement effectively minimizes epitaxial growth defects, facilitating the creation of high-quality homogeneous epitaxial layers on 2-inch substrates. This advancement lays a solid technical foundation for the industrial deployment of gallium oxide in high-voltage applications, including smart grids and new energy vehicles, and will drive forward the commercialization of fourth-generation semiconductor technology.
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