On May 27, news emerged that USI has made a substantial leap forward in next-generation power solutions. The company has successfully integrated silicon carbide (SiC) dies into a multi-layer ABF substrate, employing an innovative single-sided copper (SSC) exposed module packaging technology. This breakthrough seamlessly incorporates ceramic insulating substrates and wire-free bonding techniques into standard power packages, marking a significant advancement in internally insulated power discrete devices. The resulting package body not only boasts excellent electrical insulation properties but also offers the benefits of low stray inductance and ultra-low on-resistance. USI is set to participate in PCIM Europe 2026, which will take place in Nuremberg, Germany, from June 9 to 11, 2026. During the event, USI will showcase its latest chip embedded packaging technology, advanced power modules, and comprehensive system integration solutions.