Recently, a notable breakthrough has been made in the research of antimony selenide (Sb₂Se₃) optoelectronic conversion devices by Professor Tang Rongfeng of Hefei University of Technology, in collaboration with Professor Chen Tao from the University of Science and Technology of China. Focusing on the critical challenge of substantial open-circuit voltage loss in Sb₂Se₃ photovoltaic devices, the research team introduced a carrier polarity control strategy. This innovative approach involves composition regulation to establish a p-n homojunction within the absorption layer. Such a design not only strengthens the built-in electric field but also effectively suppresses non-radiative recombination, leading to a marked improvement in device performance. The related research findings have been published in the esteemed journal Nature Photonics, under the title "Internal Homojunction Sb₂Se₃ Solar Cell".