Recently, a research team hailing from the College of Advanced Interdisciplinary Studies at the National University of Defense Technology, in collaboration with their partners, unveiled a significant breakthrough in wafer-scale growth and controllable doping technology for innovative, high-performance two-dimensional semiconductor materials. Leveraging a chemical vapor deposition technique that utilizes a liquid gold/tungsten bimetallic film as a substrate, this technology has successfully enabled the controllable growth of wafer-scale, doping-adjustable single-layer WSi2N4 films. Remarkably, the growth rate of this process is roughly a thousand times faster than that of current technologies. This material boasts exceptional chemical stability and features adjustable carrier concentration properties, presenting vast potential for applications in the realm of two-dimensional semiconductor CMOS integrated circuits. It is anticipated to propel the independent and controllable advancement of chip technology in the post-Moore era.