The Chen Peng research team, hailing from the Shenzhen-Hong Kong College of Microelectronics at the Southern University of Science and Technology (SUSTech), has undertaken a comprehensive investigation into how interface characteristics influence the electrical performance of two-dimensional semiconductor transistors. They have proposed a strategic research pathway aimed at boosting device performance through the innovation of novel interface integration techniques. This involves a thorough examination of the mechanisms behind interface defect generation and the development of effective optimization strategies. Additionally, the team has pioneered a vapor-phase interface integration process that is well-suited for the integration of ultra-large-scale devices. Their findings have been published in Appl. Phys. Lett. 127, 212101 (2025), offering crucial technical backing for the fabrication of high-performance nanoelectronic devices in the post-Moore era. To date, the research group has published over 50 papers in prestigious journals, including Nature and Appl. Phys. Lett., and has secured 4 invention patents.