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On March 29, South Korean media outlet ETNEWS reported that Samsung Electronics’ NAND wafer manufacturing plant in Xi’an, China, has officially kicked off mass production of 236-layer stacked eighth-generation V-NAND (V8) 3D NAND flash memory. This technological upgrade, which commenced in 2024, leverages the existing 128-layer (V6) NAND production line. It is designed to boost product performance, production efficiency, and capacity competitiveness, thereby addressing the burgeoning demand for high-performance storage solutions in the age of AI. Looking ahead, Samsung’s Xi’an wafer plant will prioritize the research, development, and mass production of 286-layer stacked V9 NAND, with the corresponding production line situated at the X2 facility. The transition is slated for completion, with mass production expected to commence by 2026.
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