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Tiancheng Semiconductor Makes Leap in 14-Inch Silicon Carbide Single Crystal Tech, Propelling China’s Large-Scale SiC Development to Unprecedented Levels
15 hour ago /
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Author：小编
Tiancheng Semiconductor, a company based in Zhongbei High-Tech Zone, has recently declared a significant achievement. Building on its dual breakthroughs in 12-inch high-purity semi-insulating and N-type silicon carbide single crystals in 2025, the company has now successfully produced a 14-inch (350mm) silicon carbide single crystal material with its proprietary crystal growth technology. This material features an impressive effective thickness of 30 millimeters, is entirely free of micropipe defects, and has a dislocation density that ranks among the best internationally.
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