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Tiancheng Semiconductor Successfully Develops 14-Inch Silicon Carbide Single Crystal Material
1 day ago /
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Author：小编
On March 29th, according to the Taiyuan Daily, Tiancheng Semiconductor, an enterprise in the Zhongbei High-tech Zone, has successfully developed a 14-inch silicon carbide single crystal material with an effective thickness of 30 millimeters, following its breakthrough in 12-inch technology. This material is primarily used in equipment components based on silicon carbide and its composites, capable of withstanding harsh environments in manufacturing processes such as wafer epitaxy and etching.
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