On March 21, the Administrative Committee of the Baotou Rare Earth High-Tech Zone entered into an official investment agreement with GRINM Semiconductor Materials Co., Ltd. This agreement pertains to a project aimed at producing 1,000 metric tons of large-sized semiconductor silicon monocrystals on an annual basis. The project envisions a total investment of 400 million yuan, of which 195 million yuan will be sourced from over-raised funds, and the remaining 205 million yuan will come from the company's own capital. The over-raised funds will be predominantly utilized for the establishment of a large-sized monocrystalline silicon base. The project will span approximately 177 acres and is slated to commence in March 2026, with completion and commencement of operations anticipated before December 2027. The primary construction elements encompass a monocrystalline plant, a silicon monocrystal production line dedicated to integrated circuits, and various supporting facilities. Upon reaching full operational capacity, the project is expected to yield 1,000 metric tons of semiconductor silicon monocrystals annually. These monocrystals will be primarily employed in the manufacturing of silicon wafers and semiconductor components. Presently, the silicon-based industry within the Rare Earth High-Tech Zone predominantly concentrates on photovoltaic-grade silicon materials and has successfully established a significant production capacity advantage. Nevertheless, challenges persist, including fragmented industrial chain links and low added value within the realm of high-end semiconductor materials. As a vanguard enterprise in China's silicon materials sector, GRINM Semiconductor Materials Co., Ltd. has pioneered the industrialization of 6-inch and 8-inch silicon wafers, along with achieving a technological breakthrough in 12-inch silicon wafers, thereby showcasing its formidable technical prowess. This project aptly addresses the existing gaps in the middle and lower reaches of the silicon industrial chain within the Rare Earth High-Tech Zone. It facilitates the transition of the silicon industry from the low-end photovoltaic segment to the high-end semiconductor segment, aiding in the resolution of 'chokepoint' technological challenges in high-end electronic materials. Concurrently, it capitalizes on the company's technological and brand influence to attract upstream and downstream supporting enterprises, as well as high-end talent, thereby bolstering the core industrial competitiveness of the Rare Earth High-Tech Zone.