The iGaN laboratory, under the leadership of Professor Sun Haiding from the School of Integrated Circuits at the University of Science and Technology of China, has collaborated with research teams from McGill University in Canada, the Australian National University, Zhejiang University, the University of Cambridge in the United Kingdom, and Wuhan University. Together, they have developed an innovative photodiode architecture that seamlessly integrates optical sensing, memory, and processing functions. Leveraging this architecture, the team has constructed a large-scale diode array and created a low-power, brain-inspired vision camera. The research team has ingeniously introduced a charge storage layer into the PN junction, proposing a novel PN junction energy band design strategy. This breakthrough overcomes the traditional diode limitation of only possessing unidirectional conductivity. The new device is capable of achieving voltage-tunable optical sensing, optical synapse, and optical memory functions within a single device, eliminating the need for additional circuits.