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New Progress Achieved in All-Electrical Writing and Silicon-Based Integration of Vertical Spin Devices at the Institute of Semiconductors
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Author：小编
The third-generation spin chips based on the spin-orbit torque effect are expected to break through the physical limits of traditional semiconductor chips in terms of speed and power consumption, making them a key technological focus for international semiconductor companies such as Intel, Samsung, and TSMC. These chips utilize perpendicularly magnetized bits, which promise higher thermal stability and data retention times. However, they currently face the technical challenge of achieving energy-efficient all-electrical writing through high-density integration.
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