Recently, the research achievement titled "Strain-Enhanced Spin Readout Contrast in Silicon Carbide Thin Films", conducted by the team led by Professor Song Qinghai and Professor Zhou Yu from the School of Integrated Circuits at Harbin Institute of Technology’s Shenzhen Campus, along with their collaborators, has been selected for the 2025 Highlights Collection of Physical Review Letters. This achievement stands out as one of only seven papers chosen worldwide in the field of quantum information science and technology. Silicon carbide, a wide-bandgap semiconductor material, boasts immense potential for applications in quantum sensing, communication, and computing. However, achieving high-fidelity readout of spin states at room temperature has long posed a significant challenge in this area. The research team unveiled the regulatory mechanism through which strain influences the transition rate between spin energy levels. Their findings demonstrate that strain engineering can enhance the room-temperature spin readout contrast of silicon carbide qubits to exceed 60%, thereby laying a crucial foundation for the development of high-performance quantum devices that operate effectively at room temperature. This research received support from projects such as the National Natural Science Foundation of China.